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On the statistical trap-response (STR) method for characterizing random trap occupancy and NBTI fluc
  • 所属机构名称：北京大学
  • 会议名称：2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012
  • 时间：2012
  • 成果类型：会议
  • 相关项目：新型围栅硅纳米线MOS器件的涨落性与可靠性研究
作者： Zou, Jibin|Liu, Changze|Wang, Runsheng|Xu, Xiaoqing|Liu, Jinhua|Wu, Hanming|Wang, Yangyuan|Huang, Ru|
同会议论文项目
新型围栅硅纳米线MOS器件的涨落性与可靠性研究
期刊论文 8 会议论文 20
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