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New Observations on AC NBTI induced Dynamic Variability in Scaled High-κ/Metal-gate MOSFET
  • 所属机构名称：北京大学
  • 会议名称：2012 IEEE International Electron Devices Meeting, IEDM 2012
  • 时间：2012.12.10
  • 成果类型：会议
  • 相关项目：新型围栅硅纳米线MOS器件的涨落性与可靠性研究
作者： Pengpeng Ren|Runsheng Wang|Ru Huang|Jiaojiao Ou|Jianping Wang|Jingang Wu|Shaofeng Yu|Shiuh-Wuu Lee|Yangyuan Wang|
同会议论文项目
新型围栅硅纳米线MOS器件的涨落性与可靠性研究
期刊论文 8 会议论文 20
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