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Experimental Study on the Variation of NBTI Degradation in Nano-scaled High-k/Metal-gate PFETs
  • 所属机构名称：北京大学
  • 会议名称：2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
  • 时间：2012.10.29
  • 成果类型：会议
  • 相关项目：新型围栅硅纳米线MOS器件的涨落性与可靠性研究
作者： Changze Liu|Pengpeng Ren|Runsheng Wang|Ru Huang|Jianping Wang|Jingang Wu|Yangyuan Wang|
同会议论文项目
新型围栅硅纳米线MOS器件的涨落性与可靠性研究
期刊论文 8 会议论文 20
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