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AlInN/GaN 高电子迁移率晶体管的研究与进展
  • 期刊名称：功能材料
  • 时间：0
  • 页码：784-787
  • 语言：中文
  • 相关项目：InAlN/GaN无应变新异质结场效应晶体管材料研究
作者： 张世林|毛陆虹|冯志红|谢生|刘波|
同期刊论文项目
InAlN/GaN无应变新异质结场效应晶体管材料研究
期刊论文 33 会议论文 10 获奖 1 专利 4
同项目期刊论文
Schottky Source/Drain Al2O3/InAlN/GaN MIS-HEMT with Steep Sub-threshold Swing and High ON/OFF Curren
A high-performance enhancement-mode AIGaN/GaN HEMT
18-GHz 3.65-W/mm Enhancement-mode AlGaN/GaN HFET Using Fluorine Plasma Ion Implantation
对流扩散方程的非一致网格有限差分方法
高性能SiC整流二极管研究
宽带GaN单片功率放大器研究
InP-Based RTD/HEMT Monolithic Integration
Highly uniform sheet resistance of the double-channel AlInN/GaN heterostructure
10-GHz 4.69-W/mm InAlN/GaN HFET on sapphire substrate
Growth mechanism of vertical compositional inhomogeneities in AlInN films
二维对流扩散方程的紧致差分格式
Influence of the strain of AlN buffer layer on the strain evolution of GaN epilayer grown on 3-in 6H
A 4.69W/mm output power density InAlN/GaN HEMT grown on sapphire substrate
Al沉积时间对Si衬底GaN材料的影响
SiC衬底AlN缓冲层的应变对GaN外延层质量的影响
毫米波GaN基HEMT器件材料结构发展的研究
GaN基HEMT器件抗逆压电性能研究
Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current
An extrinsic fmax 〉 100 GHz InAlN/GaN HEMT with AlGaN back barrier
Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors
A 4.69-W/mm output power density InAIN/GaN HEMT grown on sapphire substrate
Ka波段InAlN/GaN/AlGaN双异质结场效应晶体管
偏置应力对InAlN/GaNHEMT直流特性的影响
1.0 μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition
DC Characteristics of Lattice-Matched InAlN/AlN/GaN High Electron Mobility Transistors
Comparison of electrical characteristic between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes
Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes