位置：成果数据库 > 期刊 > 期刊详情页
Influence of the strain of AlN buffer layer on the strain evolution of GaN epilayer grown on 3-in 6H
  • 期刊名称：Advanced Materials Research
  • 时间：0
  • 页码：1242-1245
  • 语言：英文
  • 相关项目：InAlN/GaN无应变新异质结场效应晶体管材料研究
作者： Jiayun Yin|Yulong Fang|Zhihong Feng|
同期刊论文项目
InAlN/GaN无应变新异质结场效应晶体管材料研究
期刊论文 33 会议论文 10 获奖 1 专利 4
同项目期刊论文
Schottky Source/Drain Al2O3/InAlN/GaN MIS-HEMT with Steep Sub-threshold Swing and High ON/OFF Curren
A high-performance enhancement-mode AIGaN/GaN HEMT
18-GHz 3.65-W/mm Enhancement-mode AlGaN/GaN HFET Using Fluorine Plasma Ion Implantation
对流扩散方程的非一致网格有限差分方法
高性能SiC整流二极管研究
宽带GaN单片功率放大器研究
InP-Based RTD/HEMT Monolithic Integration
Highly uniform sheet resistance of the double-channel AlInN/GaN heterostructure
10-GHz 4.69-W/mm InAlN/GaN HFET on sapphire substrate
Growth mechanism of vertical compositional inhomogeneities in AlInN films
二维对流扩散方程的紧致差分格式
AlInN/GaN 高电子迁移率晶体管的研究与进展
A 4.69W/mm output power density InAlN/GaN HEMT grown on sapphire substrate
Al沉积时间对Si衬底GaN材料的影响
SiC衬底AlN缓冲层的应变对GaN外延层质量的影响
毫米波GaN基HEMT器件材料结构发展的研究
GaN基HEMT器件抗逆压电性能研究
Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current
An extrinsic fmax 〉 100 GHz InAlN/GaN HEMT with AlGaN back barrier
Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors
A 4.69-W/mm output power density InAIN/GaN HEMT grown on sapphire substrate
Ka波段InAlN/GaN/AlGaN双异质结场效应晶体管
偏置应力对InAlN/GaNHEMT直流特性的影响
1.0 μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition
DC Characteristics of Lattice-Matched InAlN/AlN/GaN High Electron Mobility Transistors
Comparison of electrical characteristic between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes
Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes