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A 4.69W/mm output power density InAlN/GaN HEMT grown on sapphire substrate
  • 期刊名称：Journal of Semiconductors
  • 时间：0
  • 页码：124003-124003
  • 语言：英文
  • 相关项目：InAlN/GaN无应变新异质结场效应晶体管材料研究
作者： Cai Shunjun|Dun Shaobo|Liu Bo|Feng Zhihong|Li Jia|Fang Yulong|wang Jingjing|Zhang Sen|Zhang Xiaowei|Yin Jiayun|
同期刊论文项目
InAlN/GaN无应变新异质结场效应晶体管材料研究
期刊论文 33 会议论文 10 获奖 1 专利 4
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