中文摘要：

利用双离子束沉积设备在p-Si（100）衬底上制备了Ta2O5基MOS电容,研究了不同辅源能量0、100、200、300eV下薄膜生长机制、内部结构以及电学性质的差异。实验结果显示,在辅源能量200eV下制备的Ta2O5薄膜具有最小的表面粗糙度和优异的界面特性。由C-V/I-V特征曲线表明,辅源能量200eV下制备的Ta2O5基MOS电容具有最小的平带电压偏移量、氧化层电荷密度以及漏电流。研究表明合适的辅源能量可有效改善薄膜生长机制,使薄膜由类岛状沉积转化为层状生长,从而提高晶粒均匀性、薄膜平整度以及致密性,使薄膜具有较好的电学性质。

英文摘要：

Ta2O5-based MOS capacitor was fabricated on p-type（100） Si substrates using a dual ion beam sputtering method（DIBSD）,In this letter,influence of various assisted source energy（0,100,200,300eV,respectively） on the film＇s growth mechanism,internal microstructure and electrical properties of Ta2O5-based capacitor had been studied.The experimental result showed that the Ta2O5 film prepared under 200eV had the smallest surface roughness and excellent interfacial characteristics.C-V and I-V characteristic curves indicated that the Ta2O5 MOS had the minimum value of flat voltage offset,density of oxides charges and leakage current.Eventually we found the appropriate assisted source energy can effectively improve the film＇s growth mechanism and makes the film growth type from the island into a layered,which would improve the uniformity of crystalline grain and the film＇s roughness and compactness.