位置：成果数据库 > 期刊 > 期刊详情页
The structure and electrical properties of HfTaON high-k films prepared by DIBSD
  • ISSN号：0169-4332
  • 期刊名称：Applied Surface Science
  • 时间：0
  • 页码：2953-2958
  • 相关项目：双频调制等离子体和双离子束制备复合铪基高k薄膜机理及物理特性
作者： Yu, Tao|Jin, Chenggang|Yang, Xumin|Dong, Yaojun|Zhang, Haiyan|Zhuge, Lanjian|Wu, Xumei|Wu, Zhaofeng|
同期刊论文项目
双频调制等离子体和双离子束制备复合铪基高k薄膜机理及物理特性
期刊论文 15 会议论文 2 著作 2
同项目期刊论文
Effect of Ta incorporation on the microstructure, electrical and optical properties of Hf1xTaxO
Characterization of Hafnium-Zirconium-Oxide-Nitride films grown by ion beam assisted deposition
Study on structure and electrical properties of high-k Ta2O5 gate dielectric
Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperatu
Improvement of thermal stability and electrical performance in HfSiO gate dielectrics by nitrogen in
The influence of assisted ion beam bombardment on structure and electrical characteristics of HfSiO
高K栅介质材料的研究现状与前景
Effect of NH3 plasma treatment on the interfacial property between ultrathin HfO2 and strained Si0.6
Room temperature deposition of amorphous SiC thin films using low energy ion bombardment
The chemistry and thermal stability of HfTaO/Si interface by x-ray photoelectron spectroscopy
退火对双离子束沉积的HfTaO薄膜结构和电学性质的影响
Effect of Low-Frequency Power on Etching Characteristics of 6H-SiC in C4F8/Ar Dual-Frequency Capacitively Coupled Plasma
Experimental Characterization of Dual-Frequency Capacitively Coupled Plasma with Inductive Enhancement in Argon