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The influence of assisted ion beam bombardment on structure and electrical characteristics of HfSiO
  • ISSN号：0026-2714
  • 期刊名称：Microelectronics Reliability
  • 时间：0
  • 页码：2115-2118
  • 相关项目：双频调制等离子体和双离子束制备复合铪基高k薄膜机理及物理特性
作者： Yang, X.M.|Zhuge, L.J.|Wu, X.M.|Yu, T.|Ge, S.B.|
同期刊论文项目
双频调制等离子体和双离子束制备复合铪基高k薄膜机理及物理特性
期刊论文 15 会议论文 2 著作 2
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