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Improvement of thermal stability and electrical performance in HfSiO gate dielectrics by nitrogen in
  • ISSN号：1386-9477
  • 期刊名称：Physica E: Low-Dimensional Systems and Nanostructu
  • 时间：0
  • 页码：361-366
  • 相关项目：双频调制等离子体和双离子束制备复合铪基高k薄膜机理及物理特性
作者： Yang, X.M.|Wu, X.M.|Zhuge, L.J.|Yu, T.|
同期刊论文项目
双频调制等离子体和双离子束制备复合铪基高k薄膜机理及物理特性
期刊论文 15 会议论文 2 著作 2
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