中文摘要：

论述了45-32nm技术节点下高K材料取代SiO2的必要性和基本要求，综述了高K栅介质中极具代表性的Hf基材料。研究表明，向HfO2中分别掺杂Al、Si、Ta、N等形成的复合Hf基高K栅介质材料具备较HfO2更加优异的物理结构、晶化温度、热力学稳定性以及电学特性，但与此同时也存在如何优化掺杂量、沟道载流子迁移率下降以及中间层引起的界面退化等难题。针对这些挑战，探讨了新型“堆垛结构”和引起载流子迁移率下降的物理机制，展望了高K材料在未来先进COMS器件中的应用。

英文摘要：

The necessity of high-K materials substituting SiO2 in the technology node below 45-32nm is described. A thorough exposition is made on Hf-based materials as representative one of high-K. Related researches have revealed that composite Hf-based high K gate dielectric materials formed by doping HfO2 with Al, Si, Ta, N and other elements have belier physical structure, crystallization temperature, thermal stability and electrical properlies than HfO2, but meanwhile there also exists problems such as how to optimize doping, channel carrier mobility reduction and interface degradation caused by the middle layer. According to these challenges, the new ＂stacking structure＂ and the physical mechanism of carrier mobility reduction are discussed. At last, the future application of high-K mate rial in advanced COMS devices is prospected.