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中文摘要：
通过半导体激光器两端的放大自发荧光辐射可以获取器件的光学增益信息．本文利用这一新的增益实验测量方法，开展了对连续运行的808nmGaAs／A1GaAs量子阱激光器横向电场（TE）与磁场（TM）偏振增益特性的实验研究．通过将实验结果与理论增益曲线对比，分析了非应变GaAs量子阱TE和TM极化偏振对应的空穴子能带随注入电流的变化规律，以及激光器在连续运行状态下的实际增益状态和影响因素．
英文摘要：
The information of optical gain of semiconductor lasers can be obtained through the amplified spontaneous emission from double facets. By utilizing this new approach, an experimental research about polarization （TE and TM） gain characteristics of continuously- operated 808 nm GaAs/A1GaAs quantum well laser is introduced in this paper. Through the measured gain spectra which are compared with the theoretical gain curves, we analyze the variations of hole subband corresponding to the polarizations along with the change of injection current, meanwhile the actual status of gain spectra and influential factors of the continuously-operated laser are discussed as well.
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