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中文摘要：
报道了980 nm高功率低发散角垂直腔面发射激光器（VCSEL）阵列。通过增大阵列单元的出光孔径和单元间距来减小阵列器件的电阻和热阻,制作的台面为直径250μm,氧化孔径200μm,单元间距280μm的4×4二维阵列,与有源区面积相同的单管器件相比具有更高的输出功率。在室温连续工作条件下,阵列在注入电流6 A时最高输出功率为1.81 W,阈值电流为1.2 A,斜率效率为0.37 W/A,微分电阻为0.01Ω。针对较大的远场发散角对单元器件有源区中电流密度分布进行了计算,分析了器件高阶横模产生的原因。使用镀制额外金层的结构来改善远场发散角,将半角宽度由30°压缩到15°以下,改进后器件的输出功率略有下降。60℃恒电流模式寿命测试结果显示器件在800 h后输出功率衰减小于10%。
英文摘要：
High power vertical cavity surface emitting laser（VCSEL） array with small divergence angle is reported.By choosing the large aperture size and enlarging the centre spacing of the elements,the resistance and thermal resistance of the array are reduced.The two-dimensional 4×4 array with element mesa diameter of 250 μm,oxide aperture of 200 μm and center to center spacing of 280 μm has a higher output power than that of the single device which has the same active area.The maximum output power is 1.81 W at a current of 6 A at room temperature.The threshold current is 1.2 A with a slop efficiency of 0.37 W/A,and the differential resistance is 0.01 Ω.The causes of the higher order transverse mode in the array element are analyzed by simulating the current density profiles in the active region.The far-field divergence angle is suppressed from 30° to less than 15° by using an extra Au layer.There is a slight drop in output power due to the introduction of the extra Au layer.The aging test is carried out under constant current mode at 60 ℃ and the result shows that the total degradation of output power is less than 10% after 800 h.
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