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中文摘要：
采用XeCl准分子脉冲激光，在真空环境中烧蚀单晶Si靶，在Si（111）和石英衬底上沉积生成非晶Si薄膜．在同样的环境下，用激光对非晶Si薄膜进行退火，通过扫描电子显微镜和拉曼光谱仪对退火后的样品进行分析比较．结果表明，激光能量对非晶薄膜的晶化和纳米晶粒尺寸有重要影响．
英文摘要：
In the vacuum situation, the Si target was ablated by XeCl pulsed laser, the amorphous Si thin films were deposited on the substrates of Si （111） and quartz. Under the same ambient, the as-deposited films were annealed by pulsed laser, then analyzed the as-annealed samples by scanning electron microscope and Raman scattering measurements. The results indicate that the energy of the annealed laser have important effect on the crystallization of the films and the size of nanoparticles.
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