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中文摘要：
在4．0×10^-4Pa的真空条件下，采用脉冲激光烧蚀技术在单晶Si衬底和石英衬底上制备了非晶纳米Si薄膜。在N2气氛下，经过900℃热退火得到纳米Si晶薄膜。采用表面台阶测试仪、扫描电子显微镜、拉曼光谱仪等检测手段对样品不同位置的微观结构进行了表征。测量结果表明制备的纳米Si晶薄膜厚度及其晶粒尺寸分布不均匀，随着测量点与样品沉积中心距离的增加，薄膜的厚度逐渐减小，纳米Si晶粒的尺寸逐渐增大。从脉冲激光烧蚀动力学的角度对实验结果进行了定性的分析。
英文摘要：
Nanocrystalline silicon film are prepared by pulsed laser ablation under 4.0 × 10^-4 Pa and post-annealing in nitrogen. The surface profit measuring system, scanning electron microscopy and Raman spectrum are Used to investigate the microstructure at different positon of the film. The results indicate that the film thickness and distribution of the nc-Si grain size are non-uniform. With increasing the distance between the measured position and the film center, the film thickness gradually decreases and the grain size of nc-Si increases, which can be explain qualitatively by the plume dynamics of pulsed laser ablation.
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