中文摘要：

为深入理解纳米硅（Si）晶粒的成核机理,实现纳米Si晶粒的均匀可控,采用蒙特-卡罗（MonteCarlo）模拟方法,对脉冲激光烧蚀单晶Si靶沉积纳米Si晶薄膜过程中烧蚀粒子在环境气体中的输运动力学过程进行了模拟,并研究了环境气体种类对烧蚀粒子时空分布的影响.研究结果表明,当环境气体种类确定时,随着时间的推移,烧蚀粒子强度分布的峰值右移;并且在He环境气体中烧蚀粒子的传播距离最大,在Ar环境气体中烧蚀粒子传播距离最小;随着距靶的距离增加,烧蚀粒子的强度减小,在Ne环境气体中传输的烧蚀粒子出现二次强度峰的时间最早,并且强度峰值最大.

英文摘要：

For deeper understanding the mechanism of nucleation forming and realizing uniformity and controllability of Si nanocrystal particles,the dynamics of the ablated particles in the process of the deposition of nanocrystal silicon thin film by the pulsed laser ablation was simulated via Monte Carlo method,and the influence of the ambient-gas type on the spatial and temporal distribution of the ablated particles was studied.When the ambient gas was given,the peak value of the intensity moved to right with increase of the time.The maximum propagation-distance of the ablated-particles was the largest in the He ambient,and was smallest in the Ar ambient.With the increase of the distance from the target,the peak value of intensity of the ablated-particles decreased.The second intensity-peak appeared firstly,and the peak-value was the maximum in the Ne ambient gas.