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中文摘要：
利用双温方程对激光烧蚀Si靶的过程进行了数值模拟,并结合合适的初始条件和边界条件,研究了在飞秒、皮秒激光作用下,脉冲波形（矩形、梯形、三角形和高斯形）对Si靶表面载流子和晶格温度分布的影响。结果表明：激光功率密度是影响载流子温升的主要因素,矩形脉冲激光烧蚀Si靶表面载流子的峰值温度最高,而高斯分布的脉冲引起靶面载流子峰值温度最低。可见,激光脉冲波形对Si靶表面载流子的温度分布具有重要影响。所得结果可为制备高质量的薄膜提供理论依据。
英文摘要：
Numerical simulation was applied to the study of femto/picosecond laser-target interaction by two-temperature equation with proper initial and boundary conditions.The influence of laser pulse shapes on the carrier and lattice temperatures on the surface of Si-target was investigated.The results indicate that the main factor of temperature increasing is laser pulse power density.Pulse shapes：significantly effect the temperature distribution of the carriers on the Si-target surface,the temperature peak for rectangle pulses is the largest,and the temperature peak of Guassian pulses is the smallest.The conclusions are the theoretical basis of preparing excellent thin films.
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