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中文摘要：
采用脉冲激光烧蚀技术，在真空条件下沉积了一系列非晶Si薄膜，并对薄膜样品进行不同能量密度的激光退火处理。通过扫描电子显微镜（SEM）、X射线衍射仪（XRD）、Raman散射仪（Raman）等手段对退火后的薄膜进行形貌、晶态成分表征，确定了非晶Si薄膜晶化的激光能量密度阈值（85mJ／cm^2）。结合激光晶化机理进行定量计算。结果显示：形成一个18nm的Si晶粒所需要的能量，即成核势垒大小约为1．4×10^-9mJ。
英文摘要：
Amorphous Si films were prepared by pulsed laser ablation in base vacuum, then annealed by laser of different energy density. The morphology and compositon of crystalline were characterized by SEM, XRD and Raman diffraction. The energy density threshold of laser was 85 mJ/cm2 for amorphous Si films crystallization. The results of calculation indicate that the nucleation potential barrier was 1.4 ×10.9 mJ during formation of one nanooarticle with size of 18 nm.
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