采用Ni-Nb薄膜作为导电阻挡层,以‰.5Sr0.5C003(LSCO)为底电极,构建了LSCO/Pb(zr0.4,Ti0.6)03(PZT)/LSCO异质结电容器。使用X射线衍射仪和铁电测试仪对其进行结构表征和性能测试。实验发现:Ni-Nb薄膜为非晶结构,PZT薄膜结晶状况良好。LSC0/PZT/LSCO电容器在5V外加电压测试下,电滞回线具有良好的饱和趋势,剩余极化强度P,为35.5μC/cm2,矫顽电压K为1.42V,电容器具有良好的抗疲劳特性和保持特性。
The Ni-Nb film was used as a conductive barrier layer to integrate Lao. 5Sr0.5 CoO3 (LSCO)/Pb ( Zro.4, Ti06 ) 03 ( PZT)/La0.5Sr0.5CoO3 (LSCO) heterostructure capacitor on Si substrates. The structural and physical properties of the capacitor were inves -ray diffraction results showed that the Ni-Nb film condition. It is found that the LSCO/PZT/LSCO tigated by X-ray diffraction and a ferroelectric tester. X is amorphous, and the PZT film is crystalline in good capacitor presented a saturated hysteresis loop at 5 V applied voltage ferroelectric property measurement. The remnant polarization and coercive voltage of the LSCO/PZT/LSCO capacitor are 35.5 μC/cm2 and 1.42 V, respectively. Moreover, it is found that the capacitor possessed good fatigue and retention characteristics.