中文摘要：

采用射频磁控溅射法架构了Cu（50 nm）/Nb-Ni（50 nm）/Si异质结,利用四探针电阻测试仪、X射线衍射仪和原子力显微镜等研究了样品在不同温度下高真空退火后的结构及输运性质。结果表明：经退火处理后的样品的方块电阻均小于常温下样品的方块电阻;X射线衍射图谱中,各个退火温度下均没有Nb-Ni结晶峰和其它杂峰出现;在AFM图像中,随着退火温度的上升,样品表面的粗糙度逐渐增加,晶粒的尺寸也在逐渐增大,直到当退火温度达到750℃左右,样品表面布满了岛状晶粒进而导致阻挡层失效。

英文摘要：

The Cu（50 nm） /Nb-Ni（50 nm） /Si heterostructures were fabricated by radio frequency magnetron sputtering. The samples were annealed at various temperatures from room temperature to 750 ℃ in the high vacuum chamber. The structure and the properties of the samples were studied by fourpoint probe,X-ray diffraction（XRD） and atom force microscope（AFM）. The results indicate that the sheet resistances of all the annealed samples are smaller than that of the as-grown sample; as the annealing temperature increasing,there is no Nb-Ni peak or other peaks appearing,indicating that the Nb-Ni film is still amorphous after the high temperature annealed. The roughness of the samples increase with the annealing temperatures,but it still continuous and smooth until the annealing temperature reaches 750 ℃,in which the island-like grains are distributed on the surface of the sample and the barrier is failed at this temperature.