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中文摘要：
采用溶胶-凝胶法在Pt（111）/Ti/SiO2/Si（001）基片上制备了BiFe0.95Mn0.05O3（BFMO）薄膜,并构架了Pt/SrRuO3/BFMO/Pt型电容器。X射线衍射（XRD）分析发现在650℃快速退火可以得到良好结晶质量的多晶薄膜。紫光入射到薄膜表面,电滞回线发生变化,这是由于光照在薄膜内部产生的光生载流子影响了退极化场的分布。研究表明,在紫光照射下,薄膜的漏电流密度变大,电导由5.1×10-7S增大到6.63×10-7S。通过对暗电流密度的拟合发现,BFMO薄膜为欧姆导电机制。
英文摘要：
BiFe0.95Mn0.05O3（BFMO） film was fabricated on Pt（111）/Ti/SiO2/Si（001） substrate by sol-gol method,and a capacitor with a structure of Pt/SrRuO3/BFMO/Pt was constructed.X-ray diffraction（XRD） showed that well-crystallized BFMO film could be obtained at annealing temperature of 650 ℃.Hysteresis loop changed under illumination of purple light,which is taken account for effect of photo-induced carrier in film on depolarized field.Additionally,an increase in leakage current density was observed in purple light.Conductance of BFMO film increased from 5.1×10-7 S to 6.63×10-7 S when illuminated with purple light.Analysis of dark current density suggested that ohmic conduction behavior is the leakage current mechanism.
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