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中文摘要：
传统的方法很难直接在硅衬底上制备外延的氧化物铁电电容器，本实验采用生长在硅衬底上的外延SrTiO3为模板，直接生长了SrRuO3／PbZr0．5Ti0．5O3／SrRuO3电容器异质结，并对其结构及性能进行了研究。x射线衍射表明所制备的SrRuO3／PbZr0．5Ti0．5O3／SrRuO3异质结实现了在硅衬底上的外延生长。在5V测试电压下，铁电电容器的剩余极化强度和矫顽电压分别为19．6μC／cm^2和0．8V。当极化翻转次数达到10^10时，铁电电容器的极化强度没有明显的衰减，表明SrRuO3／PbZr0．5Ti0．5O3／SrRuO3电容器具有良好的抗疲劳性能。
英文摘要：
It is difficult to direcdy fabricate epitaxial oxide ferroelectric capacitor on Si substrate by traditional methods, SrRuO3/PbZr0.5 Ti0.5 O3/SrRuO3 capacitor was fabricated on the epitaxial SrTiO3 template which was grown on Si substrate. The X-ray diffraction spectra show that SrRuO3/PbZr0.5 Ti0.5 O3/SrRuO3 heterostructure is epitaxially grown on Si substrate. The remnant polarization and coercive voltage of the ferroelectric capacitor are 19.6 μC/cm2 and 0.8 V measured at 5 V, respectively. It is found that the polarization of ferroelectric capacitor do not show observable degradation up to 10^10 switching cycles, which indicating that SrRuO3/PbZr0.5 Ti0.5 O3/SrRuO3 ferroelectric capacitor possesses good fatigue-resist properties.
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