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Circular photogalvanic effect at inter-band excitation in InN
  • ISSN号：0038-1098
  • 期刊名称：Solid State Communications
  • 时间：0
  • 页码：159-162
  • 语言：英文
  • 相关项目：获得高质量低位错密度GaN衬底的生长新思路及相关关键问题研究
作者： Liu, B.|Xiu, X. Q.|Han, R.|Tang, C. G.|Zheng, Y. D.|Xie, Z. L.|Wang, Z. G.|Zhang, R.|Lu, H.|Zhang, Z.|Chen, Y. H.|
同期刊论文项目
获得高质量低位错密度GaN衬底的生长新思路及相关关键问题研究
期刊论文 35 会议论文 8 专利 8
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