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中文摘要：
用电沉积法分别制备了具有不同调制波长的Ag/Cu和Cu/Ni金属多层膜,研究了多层膜的硬度与调制波长之间的关系。结果表明,当调制波长λ〉300 nm时,两种多层膜的硬度与调制波长符合位错塞积机制的Hall-Petch关系,当λ〈300 nm时,都偏离了Hall-Petch关系;Ag/Cu和Cu/Ni多层膜分别在λ=50 nm和100 nm处取得硬度峰值。基于Cheng等人的电子理论分别求出了Ag、Cu和Ni金属晶体的位错稳定的临界晶粒尺寸,进而定量地解释了Ag/Cu和Cu/Ni金属多层膜硬度峰值位置。
英文摘要：
Ag/Cu and Cu/Ni metallic multilayer films with various modulation wavelengths were prepared by electrodepositing technique.The relationship between hardness of the multilayer and the modulation wavelength was investigated.For both Ag/Cu and Cu/Ni multilayers,when the modulation wavelength is greater than 300 nm,the variation of hardness with respect to modulation wavelength can be described by the Hall-Petch model of the dislocation pile-ups mechanism,and a breakdown from the Hall-Petch model is observed at modulation wavelength below 300 nm.The peak hardness occurs at modulation wavelength about 50 nm for Ag/Cu and about 100 nm for Cu/Ni multilayers.Based on Cheng’s electron theory,the critical grain sizes with stable dislocations for Ag,Cu and Ni crystals were evaluated.The positions of the peak hardness can be explained according to the critical grain size with stable dislocations.
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