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中文摘要：
采用射频磁控溅射法在（001）硅片上制备了ZnO薄膜，利用X射线衍射对薄膜的制备工艺进行了研究，结果表明，基板温度、溅射功率、氩氧比、总气压在一个较大的范围内变化时都可实现薄膜的c轴择优取向生长。随后对薄膜进行了空气退火并利用摇摆曲线表征薄膜的结晶质量，摇摆曲线的半高宽随退火温度的提高而减小，700℃退火后FWHM为2．5°。
英文摘要：
ZnO films were deposited on Si （001） substrates by RF magnetron sputtering. The deposition conditions were studied by X-ray diffraction. The results showed that highly c-axis orientation films can be realized with varied substrate temperature,sputtering power,gas ratio and pressure in a relative wide range. The as-deposited films were annealed in air from 500-700℃ and the film crystallinities were characterized by X-ray rocking curve. It showed that the full-width at half maximum （FWHM） of the rocking curve decreased with the increasing of the annealing temperature. After annealed at 700℃ ,the FWHM was 2.5°.
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