利用射频溅射系统在P型Si(100)衬底上制备氮化硼薄膜。对其进行600~1000℃的常压下N2保护退火。通过傅立叶变换红外谱(FTIR)分析,发现hBN-cBN-hBN的可逆相变。通过不同温度退火后立方相横光学振动模式峰位的移动,计算了氮化硼薄膜中残余应力的变化。发现沉积后退火很好地解决了高立方相氮化硼薄膜应力释放的问题,可提高立方氮化硼薄膜在硅衬底上的粘附性。并且探索性地讨论在退火过程中c-BN成核、生长与薄膜中应力变化的关系。
One group of hexagonal BN films were prepared on p-Si (100) substrates by radio frequency sputtering. The samples were annealed in normal pressure N2 from 600 to 1000℃. We found reversible transformation of hBN-cBN-hBN by FTIR spectroscopy. The change of residual stress in the BN films were calculated by measuring the frequency shifts in the TO peaks of c-BN after annealing at different temperatures. The ralaxation of residual stress leads to better adhesion. In addition, the relation of stress and the nucleation of cubic phase has been discussed tentatively.