中文摘要：

利用射频溅射方法在n型Si（111）衬底上制备出立方相含量接近100％且粘附性较高的立方氮化硼（c—BN）薄膜．傅里叶变换红外谱（FTIR）的结果表明，基底负偏压对薄膜立方相含量和薄膜压应力有很大影响，另外，衬底的电阻率对c—BN生长和薄膜的压应力也有一定的影响。

英文摘要：

Cubic boron nitride （c-BN） thin films with approximate 100% cubic phase and lower compressive stress were prepared on n-Si（ 111 ） substrates by radio frequency sputtering . The infrared spectra showed that the negative substrate bias had important effect on the content of cubic phase and the compressive stress of films. In addition, a relatively higher substrate resistivity favored the c-BN formation and reduced the compressive stress.