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中文摘要：
提出了一种基于二维器件模拟的深亚微米工艺外延型衬底的电阻宏模型.该宏模型通过器件模拟与非线性拟合相结合的方法建立,使衬底寄生参数的提取更加方便,同时保障了深亚微米电路特性的模拟精度.此外,该宏模型结构简单,可以得到与器件模拟基本一致的模拟结果,并可以方便地嵌入SPICE中进行一定规模的电路模拟.
英文摘要：
A resistance macromodel for deep-submicron process epi-type substrate based on the 2D device simulation is presented. The macromodel is built up with the combination of device simulation and nonlinear curve fit, which makes the extraction of the substrate parasitic parameters more convenient and the circuit simulation more accurate. Furthermore, its circuit structure is simple and it can be implemented easily in SPICE program for circuit simulations.
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