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Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapp
ISSN号:0256-307X
期刊名称:Chinese Physics Letters
时间:0
页码:530-535
语言:英文
相关项目:稳定高效的ZnOp型掺杂与生长设备、可控技术及测试方法研究
作者:
Z. W. Zhao|Q. Fu|X. Chen|H. W. Liang|D. Q. Yu|J. M. Bian|L. Z. Hu|J. C. Sun|B. Z. Huo|H. Q. Zhang|
同期刊论文项目
稳定高效的ZnOp型掺杂与生长设备、可控技术及测试方法研究
期刊论文 63
专利 8
同项目期刊论文
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p-Type Sb-Doped ZnO Thin Films Prepared by Metallorganic Chemical Vapor Deposition Using Metallorgan
Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate wi
Catalyst-free synthesis of ZnO nanorod arrays on InP (001) substrate by pulsed laser deposition
MOCVD法制备ZnO薄膜的正交试验设计
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The structure and optical characters of the ZnO film grown on GaAs/Al2O3 substrate
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Photoluminescence study of novel phosphorus-doped ZnO nanotetrapods synthesized by chemical vapour d
Room temperature electroluminescence from ZnO/Si heterojunction devices grown by metal-organic chemi
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Ag掺杂p型ZnO薄膜及其光电性能研究
光辅助对MOCVD法制备ZnO薄膜性能的影响
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Realization of controllable etching for ZnO film by NH4Cl aqueous solution and its influence on opti
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Effect of anneal on the properties of MgxZn1-xO thin films deposited by metal-organic chemical vapor
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The Huang-Rhys factor and the strength of exciton-LO phonon coupling in ZnO/Mg0.15Zn0.85O superlatti
NH3掺杂ZnO薄膜的生长及特性
Ag掺杂对ZnO薄膜的光电性能影响
p型MgxZn1-xO薄膜材料的制备与光学特性
LP-MOCVD法制作n-ZnO/p-Si异质结及其电致发光研究
超声喷雾热解法生长氧化锌同质p-n结及其电致发光性能研究
退火对MgxZn(1-x)O薄膜特性的影响
PLD方法制备的ZnO纳米柱结构及光学特性
衬底温度对PLD方法制备的ZnO薄膜的光学和电学特性的影响
期刊信息
《中国物理快报:英文版》
中国科技核心期刊
主管单位:中国科学院
主办单位:中国科学院物理研究所、中国物理学会
主编:
地址:北京中关村中国科学院物理研究所内(北京603信箱《中国物理快报》编辑部)
邮编:100080
邮箱:cpl@aphy.iphy.ac.cn
电话:010-82649490 82649024
国际标准刊号:ISSN:0256-307X
国内统一刊号:ISSN:11-1959/O4
邮发代号:
获奖情况:
中国期刊方阵“双高”期刊
国内外数据库收录:
美国化学文摘(网络版),美国数学评论(网络版),荷兰文摘与引文数据库,美国剑桥科学文摘,美国科学引文索引(扩展库),英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,英国英国皇家化学学会文摘
被引量:190