采用低压-金属有机化学气相沉积(MOCVD)技术,结合正交试验设计,在(100)P—Si衬底上制备了高质量的ZnO薄膜。用室温光致发光研究了不同生长参数对ZnO薄膜光学质量的影响。通过正交分析法对所得样品相关特征指标的分析,得到生长温度、锌源温度和氧气流量3个独立工艺参数对薄膜光学质量的影响。结果表明,生长温度对薄膜光学质量的影响最大,其余依次为氧气流量和锌源温度,同时,通过分析还得到了最佳组合工艺。结合面探X射线衍射仪,分析了薄膜的结晶质量,发现在优化的工艺条件下制备出的ZnO薄膜具有较好的结晶质量。
Based on orthogonal design, ZnO films were prepared by Metal Organic Chemical Vapor Deposition (MOCVD) on (100) p-Si substrate. Mathematical statistical method was employed to analyze the experimental results derived from optical measurements with photoluminescence spectra measurement system. Dependences of the films' optical properties on three main factors of growth temperature, Zn source temperature and flow rate of oxygen were investigated, respectively. The comprehensive optimal fabrication condition of ZnO films was obtained as well ultimately, that is 630 ℃ for growth temperature, --18 ℃ for Zn source temperature, and 200 sccm for flow rate of oxygen. The result of X-ray diffraction indicates that the films grown under the optimized conditions has good crystal quality.