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中文摘要：
采用低压-金属有机化学气相沉积法（LP-MOCVD）在（100）p-Si衬底上制备未掺杂n型ZnO薄膜,并制作了相应的n-ZnO/p-Si异质结器件。通过X射线衍射（XRD）、光致发光（PL）光谱和霍尔测试分别研究了所制备薄膜的结构、光学和电学特性,得到具有较高质量的n型ZnO薄膜。在室温条件下,测得了该类异质结器件正向注入电流下可见光和近红外区域的电致发光（EL）。
英文摘要：
n-ZnO/p-Si hetercvjunction light emitting diodes were fabricated on （100） p-Si substrate using low pressure metal organic chemical vapour deposition （LP-MOCVD） technique. The structural, optical and electrical properties of the undoped ZnO films have been investigaled by means of Xray diffraction （XRD）,photoluminescence（PL） spectra and Hall effect measurements. The results indicate that all of the samples have good quality. And fairly good rectifications are observed from the current-voltage curves of the both heterojunctions. Visible electroluminescence（EL） and infrared EI. emissions are detected from devices at room temperature.
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