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中文摘要：
采用超声喷雾热解法在单晶GaAs（100）衬底上生长ZnO同质p-n结．以醋酸锌水溶液为前驱体，分别以醋酸铵和硝酸铟为氮（N）源和铟（In）源，通过氮-铟（N-In）共掺杂沉积P型ZnO薄膜，以未故意掺杂的ZnO薄膜做为n型层获得ZnO基同质p-n结．采用热蒸发工艺在ZnO层和GaAs衬底上分别蒸镀Zn／Au和Au／Ge／Ni电极而获得发光二极管原型器件，在室温下发现了该器件正向电流注入下的连续发光现象．
英文摘要：
ZnO has recently become a very popular material due to its great potential for optoelectronics applications. To realize practical application of short-wavelength optoelectronic devices （such as LEDs and LDs） based on ZnO materials, electroluminescence （EL） from ZnO p-n homo junction is pivotal. In this article, ZnO homo junction was grown on single-crystal GaAs （100） substrate by ultrasonic spray pyrolysis with Zn（CH3COO）2-2H2O as precursor solution. CH3COONH4 and In（NO3）3 aqueous solutions were chosen as the doping sources of nitrogen and indium respectively. The ZnO homojunction was comprised of N-In codoped p-type ZnO and unintentionally doped n-type ZnO film. Ohmic contact layers on n-type ZnO layer and GaAs substrate were formed by Zn/Au and Au/Ge/Ni electrode respectively. Moreover, light emission was observed under forward current injection at room temperature, the emission could be clearly seen by the naked eye in a darkened room. With the demonstrated success of electroluminescence from ZnO p-n homojunction at room temperature, the application of short-wavelength optoelectronic devices based on ZnO materials should be possible in the near future.
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