中文摘要：

采用超声喷雾热分解法在石英衬底上以醋酸锌水溶液为前驱体，以硝酸银水溶液为Ag掺杂源，以高纯O2为载气生长了Ag掺杂ZnO（ZnO：Ag）薄膜。研究了Ag掺杂ZnO薄膜的表面结构、电学和光学性质。结果表明所得ZnO：Ag薄膜表面结构良好，扫描电子显微镜（SEM）测试表明薄膜表面光滑平整，结构致密均匀；在室温光致发光（PL）光谱中检测到很强的近带边紫外发光峰；透射光谱中观测到非常陡峭的紫外吸收截止边和较高的可见光区透过率，表明薄膜具有较高的晶体质量与较好的光学特性；霍尔效应测试表明，在550℃下获得了P型导电的ZnO：Ag薄膜。

英文摘要：

Recently, ZnO has attracted great interest for its wide band-gap （3.37 eV） and relatively large exciton binding energy （60 meV） at room temperature （RT）. It has been regarded as one of the most promising candidates for the next generation of ultraviolet （UV） light emitting diodes （LEDs） and lasing devices （LDs） operating at high temperatures and in harsh environments. For the application of ZnO based optoelectronic devices, it is necessary to fabricate both n-type and p-type ZnO films. It is easy to obtain n-type ZnO because it is intrinsic electron-conduction. However, realization of stable and reproducible p-type ZnO has long been the bottle-neck of ZnO-based optoelectronic devices. So far, a variety of dopants, mainly the group-V elements such as N, P, As, and Sb, and group-I elements such as Li, Na, and K, has been used to produce p-type ZnO. Though great progress has been made in fabricating p-type ZnO and even fabricating ZnO based p-n junction light emitting devices, this challenge still represents a major problem since the light-emitting efficiency was generally very limited due to the low concentration and mobility of holes in the p-type layer. Group IA element may be useful only for producing semi-insulating ZnO instead of p-type material, because their small ionic radii make them very easy to form the interstitial site as donor impurities rather than substitute on Zn site as acceptor impurities. Group V elements were also faced with considerable difficulties for p-type ZnO doping because of problems such as its self-compensating effect, deep acceptor level, and low solubility of the acceptor dopants. In addition, the choice of dopant and growth technique remains controversial and the reliability of p-type ZnO is still under debate. Lately, argentum （Ag） , as group IB elements, was proposed to be a good acceptor candidate for producing p-type ZnO under oxygen-rich growth conditions based on first-principles calculations. Furthermore, p-type ZnO thin film has been achieved exp