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中文摘要：
通过金属有机化学气相沉积（MOCVD）法在GaAs衬底上制备出了MgZnO/ZnO的p-n异质结,并研究了其I-V特性：开启电压约为3.6V,结特性良好.比较了n型ZnO层与p型MgxZn1-xO层的电阻率、迁移率和载流子浓度.ZnO层的电阻率很小,载流子浓度很大;而MgxZn1-xO层的电阻率却大幅度的增加,载流子浓度较ZnO层小了一个数量级.通过对其n型与p型层的光致发光（PL）谱的测试发现,ZnO层与MgxZn1-xO层分别在382和370nm处存在着由自由激子复合而导致的紫外发光峰,为近带边发光.MgxZn1-xO的紫外峰明显弱于ZnO样品的,这是由于MgZnO合金中易形成分相所造成的,所以现阶段其晶体质量还不能与ZnO的相比.另外,两样品在480nm附近都存在着比较弱的深能级发光峰,这是晶体的本征缺陷或其他杂质的引入造成的,并对样品进行了X射线衍射（XRD）谱与电致发光（EL）谱等测试与分析.
英文摘要：
A MgZnO/ZnO p-n heterojunction was grown on GaAs substrate by metal-organic chemical vapor deposition. The I-V characteristics showed a diode characteristic between the n-ZnO and p-MgZnO layers with a threshold voltage of 3.6V. When the injection current attained 50 mA,the emission was visible to the naked eye in the dark. Room temperature measurements, such as the HALL, XRD, PL, and EL spectra were carried out. The PL spectra of the n-ZnO and p-MgZnO layers both showed strong NBE peaks and weak broad DLE peaks. The EL spectra of the junction under different injection current all showed strong broad DLE peaks from 450 to 550nm,attributed to the deep-level transition.
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