欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
采用MOCVD法在c面蓝宝石衬底上生长出了高质量的MgxZn1-xO薄膜.研究了退火对MgxZn1-xO薄膜各种特性的影响.将样品分别在真空和氧气中退火1h.X射线衍射研究发现,在真空中,尤其是在氧气中退火的样品的（002）峰均增强.由原子力显微镜观察发现,在真空中退火样品的表面与未退火样品的表面几乎相同,而在氧气中退火后样品的表面变得光滑了很多.从光致发光光谱中发现,真空退火后的样品的紫外光谱峰显著增强,而深能级发射峰几乎消失.在氧气中退火后样品的紫外光谱峰减弱而深能级发射峰显著增强.所以退火对MgxZn1-xO薄膜的各种性质具有重要的影响,通过退火可调节MgxZn1-xO的晶体质量与光学质量.
英文摘要：
High-quality MgxZn1-xO thin films were grown at 610 ℃ on c-sapphire substrates by metal-organic chemical vapor deposition （MOCVD）. To research the effect of anneal on the characteristics of MgxZn1-xO,MgxZn1-xO were annealed in vacuum and oxygen for 1 h, respectively. We can find the （002） peaks of the samples which were annealed in vacuum and oxygen are both enhanced, especially in oxygen measured by XRD. From the PL spectrum, the UV emission peak of the sample annealed in vacuum increase clearly and deep-level emission peak minish. The UV emission of the sample annealed in oxygen weakened and the deeplevel emission peak enhanced remarkably due to the concentration of vacancy oxygen. It is shown that anneal can regulate the crystal, optical and electrical qualities of MgxZn1-xO film.
同期刊论文项目
同项目期刊论文
Annealing effects on electrical and optical properties of ZnO films deposited on GaAs by metal organ
Room temperature electroluminescence from the ZnO homojunction grown on an n(+)-Si substrate by meta
p-type ZnO thin films prepared by metal organic chemical vapor deposition using metal organic dopant
Effect of the magnesium composition on the properties of MgxZn1-xO-based homojunction light-emitting
Enhanced p-type ZnO films through nitrogen and argentum codoping grown by ultrasonic spray pyrolysis
Realization of ultraviolet electroluminescence from ZnO homojunction with n-ZnO /p-ZnO:As/GaAs struc
Room temperature defect related electroluminescence from ZnO homojunctions grown by ultrasonic spray
Visual-infrared electroluminescence emission from ZnO/GaAs heterojunctions grown by metal-organic ch
Electroluminescence from n-ZnO/p-ZnO:Sb homojunction light emitting diode on sapphire substrate with
Optical and electronic propertyes of ZnO:P/n+-Si heterostructures fabricated by metalorganic chemica
Room temperature electroluminescence from the n-ZnMgO/ZnO/p-ZnMgO heterojunction device grown by ult
Optical and electronic properties of ZnO : P/n(+)-Si heterostructures fabricated by metalorganic che
p-Type Sb-Doped ZnO Thin Films Prepared by Metallorganic Chemical Vapor Deposition Using Metallorgan
Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate wi
Photoluminescence and X-Ray Photoelectron Spectroscopy of p-Type Phosphorus-Doped ZnO Films Prepared
Photoluminescence investigation of ZnO:P nanoneedle arrays on InP substrate by pulsed laser depositi
Photoluminescence study of novel phosphorus-doped ZnO nanotetrapods synthesized by chemical vapour d
Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapp
Room temperature electroluminescence from ZnO/Si heterojunction devices grown by metal-organic chemi
Realization of controllable etching for ZnO film by NH4Cl aqueous solution and its influence on opti
Effect of anneal on the properties of MgxZn1-xO thin films deposited by metal-organic chemical vapor
Synthesis and defect-related emission of ZnO based light emitting device with homo- and heterostruct
Synthesis and temperature dependent photoluminescence of Zn(1-x)Mg(x)Ofilms grown by ultrasonic spra
Realization of ultraviolet electroluminescence from ZnO homojunction with n-ZnO/p-ZnO:As/GaAs struct
期刊信息
位置：