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中文摘要：
为使YIG磁性薄膜应用到Si集成电路中，利用Sol—Gel技术晶化温度低的特点，结合快速热处理（RTP）工艺在Si基上制备了Y2.97，Bi0.05FesO12薄膜．讨论了Sol—Gel工艺薄膜制备条件的优化，使用原子力显微镜（AFM），X射线衍射仪（XRD）和交变梯度磁强计（AGM）研究了RTP工艺对薄膜样品表面形貌、晶相结构及静态磁性能的影响．结果显示：Sol—Gel技术有效降低了薄膜晶化温度，RTP热处理工艺对Y2.97，Bi0.09Fe6O12薄膜结晶温度、晶相结构没有影响，对表面形貌影响较大，从而使薄膜静态磁性能略有降低，但通过低温退火可有效改善RTP工艺对薄膜磁性能的影响．
英文摘要：
The primary goal of this research is to survey the application of magnetic YIG thin film to Si IC. Sol-Gel method and rapid thermal process （RTP） were used to fabricate and crystallize Y2.97Bi0.03 FesO12 thin films on Si substrates. The optimal parameters for the fabrication of YIG thin＇films were discussed. Atomic force microscope（AFM）, X-ray diffraction（XRD） and alternating gradient magnetometer（AGM） were used to investigate the impact of RTP and Sol-Gel method on the surface topology, crystal structure and static magnetic performance of the thin-film of Y2.97 Bi0.03 Fes O12. The results showed that RTP had little effects on the thin film＇s crystallization temperature, crystal structure and saturated magnetization （Ms）, but quite significant impacts on the surface topology, which caused the increase of the coercivity for YIG thin films. It was also found that low-temperature annealing could promote the magnetic properties of the samples effectively.
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