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一种可以表征铁电晶体管存储性能退化的宏模型
  • ISSN号：0479-8023
  • 期刊名称：《北京大学学报：自然科学版》
  • 时间：0
  • 分类：TN43[电子电信—微电子学与固体电子学]
  • 作者机构：[1]北京大学微电子学研究院,北京100871
  • 相关基金：国家自然科学基金资助项目（90407023）
作者： 刘福东[1], 康晋锋[1], 安辉耀[1], 刘晓彦[1], 韩汝琦[1]
关键词： 铁电动态随机存储器, 铁电场效应晶体管, 宏模型, HSPICE, 模拟, FEDRAM, FEFET, macro model, HSPICE, simulation
中文摘要：

从铁电晶体管的动态翻转和双阈值转移特性出发,建立了一种基于施密特触发器的FEFET（铁电场效应晶体管）行为级宏模型。该宏模型可以表征FEFET的转移特性,并且模型参数较少便于调节;模型结构简单、规模较小,可用于HSPICE电路模拟。模拟结果与FEFET实验结果比较,显示该模型能够很好地反映铁电材料的疲劳等因素引起的FEFET的存储性能退化,为FEDRAM（铁电动态随机存储器）设计和优化提供了一个良好的模型基础。

英文摘要：

The authors establish an advanced macro-model that can be used to denote the device behaviors of ferroelectric field effect transistor（FEFET） including the dynamic overturn and the double threshold voltages transfer behaviors.The proposed advanced macro model with the simple and easily extracted model parameters can be performed in the HSPICE environment.The simulations show that the model can well fit the published experimental data.The proposed model can be used in the design and optimization of FEFET-based dynamic random access memory circuits.

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期刊信息
  • 《北京大学学报：自然科学版》
  • 中国科技核心期刊
  • 主管单位:教育部
  • 主办单位:北京大学
  • 主编：赵光达
  • 地址：北京海淀区海淀路52号
  • 邮编：100871
  • 邮箱：xbna@pku.edu.cn
  • 电话：010-62756706
  • 国际标准刊号：ISSN：0479-8023
  • 国内统一刊号：ISSN：11-2442/N
  • 邮发代号:2-89
  • 获奖情况:
  • 1997年第二届全国优秀科技期刊评比一等奖,1999年教育部“优秀自然科学学报一等奖”,1999年获首届国家期刊奖,中国期刊方阵“双高”期刊
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  • 被引量:18270