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衬底温度对ZnO：Al薄膜结构和性能的影响
  • ISSN号：1003-353X
  • 期刊名称：《半导体技术》
  • 时间：0
  • 分类：TN305.92[电子电信—物理电子学]
  • 作者机构：[1]华中科技大学电子科学与技术系,武汉430074, [2]湖北省光伏工程技术研究中心,武汉430074
  • 相关基金：国家自然科学基金重大资助项目（90407023）
作者： 徐玮[1], 于军[1], 王晓晶[1,2], 袁俊明[1], 雷青松[1]
关键词： 磁控溅射, 陶瓷靶材, 电阻率, 透过率, ZAO薄膜, magnetron sputtering, ceramic target , resistivities , tranmisttance , ZnO ： Al film
中文摘要：

利用射频磁控溅射法采用氧化锌铝（98%ZnO＋2%Al2O3）为靶材在普通载玻片上制备了ZAO（ZnO：Al）薄膜,研究了衬底温度对薄膜晶体结构,电学和光学性能的影响。利用X射线衍射仪、场扫描电镜对薄膜的结构及表面形貌进行了分析,利用分光光度计和电阻测试仪分别测试了薄膜的光电学性能。结果表明,衬底温度对薄膜结构及光电学性能影响最大。溅射功率120W、衬底温度300℃、工作气压0.6Pa制得的薄膜具有良好的光电学性能（可见光平均透过率为79.49%（考虑衬底的影响,电阻率为4.99×10^-2Ω·cm）。

英文摘要：

Thin films of transparent conductive Al doped ZnO was deposited on glass substrate by RF magnetron sputtering method with target of AlZnO （98% ZnO ＋ 2% Al2O3 ）, the effects of substrate temperature on structure and optical and electronical properties of ZnO ： Al thin films were investigated by XRD, SEM, UV-visble spectrophotometry and four-point probe method. Experimental results indicate that substrate temperature affects the structure and properties of the thin films considerably. The films prepared at substrate temperature of 300 ℃ with RF power of 120 W and working pressure of 0.6 Pa have good optical and electrical properties （average transmittance of 79.49 % in the range of visible light and resistivities of 4.99 ×10^-2Ω·cm） .

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期刊信息
  • 《半导体技术》
  • 中国科技核心期刊
  • 主管单位:中国电子科技集团公司
  • 主办单位:中国电子科技集团公司第十三研究所
  • 主编：赵小玲
  • 地址：石家庄179信箱46分箱
  • 邮编：050051
  • 邮箱：informax@heinfo.net
  • 电话：0311-87091339
  • 国际标准刊号：ISSN：1003-353X
  • 国内统一刊号：ISSN：13-1109/TN
  • 邮发代号:18-65
  • 获奖情况:
  • 中文核心期刊,中国科技论文统计用刊
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  • 被引量:6070