中文摘要：

The reasons for low output power of AlGaInP Light Emitting Diodes (LEDs) have been analysed.LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies.Two kinds of LEDs with the same active region but different window layers have been fabricated.The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency (EQE) has serious impaction on the internal quantum efficiency (IQE),because the carrier distribution will change with the body temperature increasing due to the heat inside,and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.

英文摘要：

The reasons for low output power of AlGalnP Light Emitting Diodes （LEDs） have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency （EQE） has serious impaction on the internal quantum efficiency （IQE）, because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.