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中文摘要：
研究了用Cl2／BCl3，刻蚀GaN基LED中，工艺参数对GaN刻蚀速率、刻蚀侧壁和GaN与SiO2刻蚀选择比的影响。研究结果表明，刻蚀速率随着ICP功率和压强的增大先增大继而减小，随RF功率的增大单调增大；刻蚀选择比随ICP功率增大单调减小，随压强增大而增大。还研究了刻蚀速率和选择比与气体比例变化的关系。刻蚀SEM图表明，压强和RF功率增大会使刻蚀垂直度增大。
英文摘要：
The etch regularity was achieved in GaN-LED etching with Cl2/BCl3. The etch parameters have much effect on etch rate of GaN and etch selectivity of GaN to SiO2. With the increasing of ICP power and pressure, the etch rate of GaN increases first and then decreases. The etch rate and etch selectivity increase monotonously with RF power. The selectivity decreases with ICP power. The effect of gas ratio was shown. The SEM results show that the etch verticality is better with pressure and RF power increasing.
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