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中文摘要：
通过调整GaN基发光二极管（LED）表面InGaN层的厚度,发现在20mA电流驱动下,LED器件的正向压降有明显差距.本文考虑了极化效应的影响,通过求解InGaN/GaN三角形势阱内二维空穴气浓度以及空穴隧穿概率的变化,求得了表面InGaN层厚度不同时器件正向压降的变化趋势,发现理论结果与实验结果有很好的吻合.同时得到了获得最低正向压降的表面InGaN厚度.
英文摘要：
GaN-based light emitting diodes （LEDs） with InGaN as the capping layer was designed in our experiment. The forward voltage at the typical driving current of 20 mA was obviously changed by adjusting the thickness of the InGaN layer. We were concerned with the effect of polarization and solved the concentration and the tunneling probability of the two dimensional hole in the triangular potential well at the surface InGaN/GaN interface and obtained the minimal forward voltage. The calculation results were consistent with the experimental data.
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