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中文摘要：
制备了GaN基绿光发光二极管,利用耦合法求解了在自发极化和压电极化效应影响下的GaN／InGaN量子阱的极化电场强度．考虑载流子在量子阱间的不均匀分布，模拟计算了系统的一维薛定谔方程、稳态速率方程和泊松方程，得到了载流子在各个阱间的分布比值和辐射复合速率,同时还得到了不同电流下电致发光（EL）谱的峰值波长、谱峰半高宽及EL谱强度的变化情况,发现当测试电流由10mA增加到70mA时，理论结果与实验结果能很好符合。
英文摘要：
GaN-based green light emitting diodes was designed and fabricated. We calculated the internal electric field using the coupled method on the basis of analyzing the effect of the spontaneous polarization and the piezoelectric polarization. Taking into consideration of the effect of non-uniform carrier distribution in the active region, we obtained the fractions of the carriers and the rate of the recombination in different wells by calculating the steady state rate equation and Poisson equation. It was found that the calculation data are consistent with the experimental data for the changes of the peak wavelength, the light power and the halfwidth with the current in the range of 10-70 mA.
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