对GaAs/AlGaAs多量子阱红外探测器外延材料进行了光致荧光谱(PL)测量,结合理论计算,由材料吸收峰位置得到势垒高度以及势阱基态位置,并由此推算出相应的红外探测响应波长。推算结果与器件光电流实验值的对比表明,由光致荧光谱(PL)测量结果计算得到的响应波长与实际器件的响应波长有良好的一致性。
The photoluminescence(PL) scan has been performed on the material of GaAs/Al-GaAs multiple quantum well infrared photodetector(QWIP). With theoretical calculation, the peak response wavelength of the QWIP is determined. The calculated result is coincident with the one from photocurrent spectrum for the same sample very well.