建立了一种适用于多量子阱和多有源区的多层速率方程模型.通过小信号分析,得到了光子密度、载流子俘获、逃逸和隧穿时间等关键参数对单有源区和隧道再生双有源区垂直腔面发射激光器频率响应特性的影响,并分析了在相同驱动电流下隧道再生双有源区器件调制带宽大于单有源区器件的原因.进一步研究了隧道再生双有源区内腔接触氧化限制型垂直腔面发射激光器的寄生电参数及其寄生电路,对其频率响应进行了模拟分析.
A rate equation model of multi-quantum wells and multi-active regions were presented. The effects of photon density and the carrier capture-escape-tunnel time on the frequency response of single active region vertical-cavity surface-emitting Laser (VCSEL) and tunnel-regenerated VCSEL with two active regions were simulated by the small signal analysis. The result of simulation shows that the modulate bandwidth of tunnel-regenerated VCSEL with two active regions is larger than that with single active region under the same drive current,then its causes are discussed. Moreover,we simulate the frequency response of the parasitic circuit of tunnel-regenerated internal-contact oxide-confined VCSEL with two active regions after analyzing its parasitic parameters.