采用计算机模拟的方法,计算了SiO2/Al,ITO/Al,SiO2/Au和ITO/Au全方位反射镜结构和分布式布拉格反射镜的反射特性,用PECVD和溅射设备制作了Glass/SiO2/Au结构,用LP-MOCVD生长了DBR结构,并测量了其反射特性,实验与模拟结果基本吻合,从模拟和实验的结果得到,SiO2/AuODR结构在波长为630nm的垂直入射光下反射率很高,达到91%以上。对于不同角度的入射光,SiO2/Au在20°-85°都有很高的反射率,远高于DBR结构的反射率,在实际器件测试中,ODR结构的AlGaInP红光LED比无DBR结构的LED提高了115%,比DBR结构的LED提高了28%。这说明,ODR结构与DBR结构相比可以大幅提高红光LED的出光效率。
The reflective spectra of SiO2/A1, ITO/A1,SiO2/Au,and ITO/Au omni-directional reflector (ODR) structure and the distributional Bragg reflector (DBR) are calculated by computer simulation. The DBR is grown by LP-MOCVD,then the glass/SiO2/Au ODR samples are fabricated by PECVD and magnetron sputtering,and finally the reflective spectra of those samples are measured. The experimental results are approximately in agreement with the simulations. The reflectivity of the SiO2/Au ODR is as high as 91% for 630nm normal incidence light. The SiO2/Au reflectivity remains a high value when the incidence light angle changes from 20° to 85°, which is much higher than the reflectivity of DBR. The results from the LED device indicates that light intensity on axis of the LED with ODR structures increases by 115% compared with that of LED without DBR,and increases by 28% compared with that of the LED with DBR. These results show the ODR structure can strongly increase the luminous efficiency of the red LEDs.