中文摘要：

硅二氧化物退火的激光(诱导地联合的血浆形成的 SiO ₂) 电影提高了化学蒸汽免职(ICPECVD ) 为低损失硅的制造被学习基于的波导。激光在扔 ICPECVD 的 SiO ₂ 电影上退火的影响被调查。表面粗糙，折射索引，并且蚀刻退火的样品的率与 ₂ 电影由热氧化获得了的 SiO 的那些相比。扔 ICPECVD 的 SiO ₂ 电影的表演能被激光退火显著地改进，这被表明。艾尔 ₂ O ₃/SiO₂ 波导与更低的 cladding 由 ICPECVD 和激光退火过程形成了的 SiO ₂ 在硅底层上被制作了，并且它的繁殖损失被发现与有热地氧化的更低的 cladding 的波导的可比较。

英文摘要：

Laser annealing of silicon dioxide （SiO2） film formed by inductively coupled plasma enhanced chemical vapor deposition （ICPECVD）is studied for the fabrication of low loss silicon based waveguide. The influence of laser annealing on ICPECVD-deposited SiO2 film is investigated. The surface roughness, refractive index, and etch rate of annealed samples are compared with those of SiO2 film obtained by thermal oxidation. It is demonstrated that the performance of ICPECVD-deposited SiO2 film can be significantly improved by laser annealing. Al2O3/SIO2 waveguide has been fabricated on silicon substrate with the SiO2 lower cladding formed by ICPECVD and laser annealing process, and its propagation loss is found to be comparable with that of the waveguide with thermally oxidized lower cladding.