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中文摘要：
<正>Dense,uniform ZnO nanowire（NW） networks are prepared by using a simple and sufficient selfassembly method.In this method,ZnO NWs are modified with aminopropyltriethoxysilane（APTES） to form positively charged amine-terminated surfaces.The modified ZnO NWs are adsorbed on negatively charged SiO2/Si substrates to form ZnO NW networks by the electrostatic interaction in an aqueous solution.Field-effect transistors （FETs） are fabricated and studied based on the ZnO NW networks.For a typical device with an NW density of 2.8μm-2,it exhibits a current on/off ratio of 2.4×105,a transconductance of 336 nS,and a field-effect mobility of 27.4 cm2/（V·s）.
英文摘要：
Dense,uniform ZnO nanowire（NW） networks are prepared by using a simple and sufficient selfassembly method.In this method,ZnO NWs are modified with aminopropyltriethoxysilane（APTES） to form positively charged amine-terminated surfaces.The modified ZnO NWs are adsorbed on negatively charged SiO_2/Si substrates to form ZnO NW networks by the electrostatic interaction in an aqueous solution.Field-effect transistors （FETs） are fabricated and studied based on the ZnO NW networks.For a typical device with an NW density of 2.8μm~^-2,it exhibits a current on/off ratio of 2.4×10^5,a transconductance of 336 nS,and a field-effect mobility of 27.4 cm^2/（V·s）.
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