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中文摘要：
<正>The selection of solvents for SiC nanowires（NWs） in a dielectrophoretic process is discussed theoretically and experimentally.From the viewpoints of dielectrophoresis force and torque,volatility,as well as toxicity, isopropanol（IPA） is considered as a proper candidate.By using the dielectrophoretic process,SiC NWs are aligned and NW thin films are prepared.The densities of the aligned SiC NWs are 2μm-1,4μm-1,6μm-1,which corresponds to SiC NW concentrations of 0.1μg/μL,0.3μg/μL and 0.5μg/μL,respectively.Thin-film transistors are fabricated based on the aligned SiC NWs of 6μm-1.The mobility of a typical device is estimated to be 13.4cm2/（V·s）.
英文摘要：
The selection of solvents for SiC nanowires（NWs） in a dielectrophoretic process is discussed theoretically and experimentally.From the viewpoints of dielectrophoresis force and torque,volatility,as well as toxicity, isopropanol（IPA） is considered as a proper candidate.By using the dielectrophoretic process,SiC NWs are aligned and NW thin films are prepared.The densities of the aligned SiC NWs are 2μm~（-1）,4μm~（-1）,6μm~（-1）,which corresponds to SiC NW concentrations of 0.1μg/μL,0.3μg/μL and 0.5μg/μL,respectively.Thin-film transistors are fabricated based on the aligned SiC NWs of 6μm~（-1）.The mobility of a typical device is estimated to be 13.4cm~2/（V·s）.
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