中文摘要：

本文研究了六层互连线上的丢失物缺陷对互连电迁移中位寿命的影响,提出了各层互连线缺陷处的温度模型和缺陷在不同互连层的中位寿命模型,能够定量地计算缺陷对互连电迁移中位寿命的影响,给出了提高互连线中位寿命的方法.研究结果表明：互连线宽度与缺陷处互连线有效宽度的比值越大,互连线寿命越短;缺陷处的温度越高,互连线寿命越短.在互连线参数变化明显的层与层之间,互连线寿命受比值和温度的双重影响,寿命急剧下降.根据该物理模型可以准确计算出互连线具体的温度和寿命数据,可以直接指导集成电路的设计和工艺制造.

英文摘要：

In the paper, influence of lose object defects on electromigration median-time-to-failure （MTF） for six-layer copper interconnect is investigated. The temperature model with defects for each interconnection layer and MTF model for defects in different interconnection layers are presented respectively. So, the defect influence on electromigration MTF of copper interconnect can be calculated quantitatively, and the method to increase MTF is also presented. The bigger the ratio of interconnect width to the effective interconnect width at the defects, the shorter the MTF, and higher temperature at defects can also shorten the MTF. When the parameters of interconnect wire vary greatly between different layers, the MTF is affected by the ratios and the temperature, and decreases rapidly. Based on the physical model, the temperature and the MTF of copper interconnect can be calculated accurately, which can guide IC design and manufacture effectively.