中文摘要：

利用反射式高能电子衍射仪（RHEED）对微电子技术常用的Si，SrTiO3单晶基片进行了表面结构分析．研究了硅基片的不同清洗工艺对衍射图样的影响，发现衬底的处理工艺非常重要．借助于反射式高能电子的衍射图样和理论分析，计算出与理论值相近的SrTiO3基片晶格常数．结果表明，高能电子衍射仪可以被用于计算生长在基片上的外延薄膜面内晶格常数．

英文摘要：

Reflective high energy electron diffraction （RHEED） has been used to characterize the Si and SrTiO3 single crystal substrates which are very popular substrates for thin film study and application in microelectronics and scientific research. The RHEED patterns of Si （100） substrates under various cleaning process are investigated, indicating that Hydrofluoric Acid cleaning for Si is very critical for epitaxial film preparation. The lattice parameter of SrTiO3 obtained from its RHEED pattern and calculation is consistent with theoretical value, which paves a way to calculate the in-plane lattice parameters of epitaxial films.